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  Datasheet File OCR Text:
 SHINDENGEN
General Purpose Rectifiers
SMT Bridges
D1UB80
800V 1A
OUTLINE DIMENSIONS
Case : SOP-4
Unit : m
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current50Hz sine wave, R-load, Ta=25*Z 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25A 30 *Z 2 Current Squared Time I2t 1ms*...t*10ms Tj=25 *Z As 3 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =0.4A, Pulse measurement, Rating of per diode Max.0.95 V F Pulse measurement, Rating of per diode Reverse Current I R Max.10 EA R V =800v, Thermal Resistance AEjl junction to lead *@ Without heatsink Max.25 *Z/W AEja junction to ambient Without heatsink Max.62.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D1UB80
Forward Voltage
10
Forward Current IF [A]
Tl=150C [TYP]
Tl=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D1UB80
2.5
Forward Power Dissipation
Forward Power Dissipation PF [W]
SIN 2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
Average Rectified Forward Current IO [A]
Tj = 150C Sine wave
D1UB80
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 Alumina substrate 50.8mm 2 Soldering land 1mm Conductor layer 20m Substrate thickness 0.64mm
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D1UB80
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D1UB80
40
Peak Surge Forward Capability
IFSM
35
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
30
non-repetitive, sine wave, Tj=25C before surge current is applied
25
20
15
10
5
0
1
2
5
10
20
50
100
Number of Cycles [cycles]


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